WTX1012 Specs and Replacement
Type Designator: WTX1012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SC89
WTX1012 substitution
WTX1012 Specs
wtx1012.pdf
WTX1012 N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES SC-89 * Power Mosfet 1.8V Rated * Gate-Source ESD Protected 2000 V * High-Side Switching Drain * Low On-Resistance 0.7 3 * Low Threshold 0.8 V (typ) * Fast Switching Speed 10 ns BENEFITS * Ease in Driving Switches * Low-Voltage Operation 1 (Top View) 2 * High-Speed Circuits * Low Ba... See More ⇒
wtx1013.pdf
WTX1013 P-Channel 1.8-V (G-S) MOSFET P b Lead(Pb)-Free 3 FEATURES 1 2 * TrenchFET@ Power MOSFET 1.8-V Rated * Gate-Source ESD Protected 2000V * High-Side Switching SC-89 * Low On-Resistance 1.2 * Low Threshold 0.8 V (typ) Drain * Fast Switching Speed 14 ns * S-Prefix for Automotive and Other Applications Requiring 3 Qualified and PPAP Capable BENEFITS * Ease in Drivi... See More ⇒
Detailed specifications: WTK9971 , WTL2602 , WTL2622 , WTM2310A , WTN9435 , WTN9575 , WTN9973 , WTU1333 , AO4407A , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A .
History: WTM2310A
Keywords - WTX1012 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
