WTX1012 Datasheet. Specs and Replacement

Type Designator: WTX1012  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: SC89

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WTX1012 datasheet

 ..1. Size:769K  wietron
 wtx1012.pdf pdf_icon

WTX1012

WTX1012 N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES SC-89 * Power Mosfet 1.8V Rated * Gate-Source ESD Protected 2000 V * High-Side Switching Drain * Low On-Resistance 0.7 3 * Low Threshold 0.8 V (typ) * Fast Switching Speed 10 ns BENEFITS * Ease in Driving Switches * Low-Voltage Operation 1 (Top View) 2 * High-Speed Circuits * Low Ba... See More ⇒

 8.1. Size:541K  wietron
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WTX1012

WTX1013 P-Channel 1.8-V (G-S) MOSFET P b Lead(Pb)-Free 3 FEATURES 1 2 * TrenchFET@ Power MOSFET 1.8-V Rated * Gate-Source ESD Protected 2000V * High-Side Switching SC-89 * Low On-Resistance 1.2 * Low Threshold 0.8 V (typ) Drain * Fast Switching Speed 14 ns * S-Prefix for Automotive and Other Applications Requiring 3 Qualified and PPAP Capable BENEFITS * Ease in Drivi... See More ⇒

Detailed specifications: WTK9971, WTL2602, WTL2622, WTM2310A, WTN9435, WTN9575, WTN9973, WTU1333, IRF830, WTX7002, CEA6200, CEA6426, CEB01N65, CEB01N6G, CEB02N65A, CEB02N65G, CEB02N6A

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