WTX1012 Datasheet and Replacement
Type Designator: WTX1012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SC89
WTX1012 substitution
WTX1012 Datasheet (PDF)
wtx1012.pdf

WTX1012N-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURES:SC-89* Power Mosfet : 1.8V Rated* Gate-Source ESD Protected: 2000 V* High-Side SwitchingDrain* Low On-Resistance: 0.73* Low Threshold: 0.8 V (typ)* Fast Switching Speed: 10 nsBENEFITS:* Ease in Driving Switches* Low-Voltage Operation1 (Top View) 2* High-Speed Circuits* Low Ba
wtx1013.pdf

WTX1013P-Channel 1.8-V (G-S) MOSFETP b Lead(Pb)-Free3FEATURES:12* TrenchFET@ Power MOSFET: 1.8-V Rated* Gate-Source ESD Protected: 2000V* High-Side SwitchingSC-89* Low On-Resistance: 1.2* Low Threshold: 0.8 V (typ)Drain* Fast Switching Speed: 14 ns* S-Prefix for Automotive and Other Applications Requiring 3 Qualified and PPAP CapableBENEFITS:* Ease in Drivi
Datasheet: WTK9971 , WTL2602 , WTL2622 , WTM2310A , WTN9435 , WTN9575 , WTN9973 , WTU1333 , AO3407 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A .
History: IRLHM620
Keywords - WTX1012 MOSFET datasheet
WTX1012 cross reference
WTX1012 equivalent finder
WTX1012 lookup
WTX1012 substitution
WTX1012 replacement
History: IRLHM620



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