CEA6200 Datasheet and Replacement
Type Designator: CEA6200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT89
CEA6200 substitution
CEA6200 Datasheet (PDF)
cea6200.pdf

CEA6200N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 1.8A, RDS(ON) = 250m @VGS = 10V. RDS(ON) = 330m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-89 package.GDSDGSOT-89SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units
Datasheet: WTL2622 , WTM2310A , WTN9435 , WTN9575 , WTN9973 , WTU1333 , WTX1012 , WTX7002 , 5N50 , CEA6426 , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G .
History: SSP5N90A
Keywords - CEA6200 MOSFET datasheet
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History: SSP5N90A



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