All MOSFET. CEA6200 Datasheet

 

CEA6200 Datasheet and Replacement


   Type Designator: CEA6200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT89
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CEA6200 Datasheet (PDF)

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CEA6200

CEA6200N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 1.8A, RDS(ON) = 250m @VGS = 10V. RDS(ON) = 330m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-89 package.GDSDGSOT-89SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

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History: IPB50R250CP | BUZ84 | IRLR024 | AON6794 | NTMFS4C55N | CED05N8 | BL10N70-A

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