All MOSFET. CEA6200 Datasheet

 

CEA6200 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEA6200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.4 nC
   trⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT89

 CEA6200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEA6200 Datasheet (PDF)

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 cea6200.pdf

CEA6200 CEA6200

CEA6200N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 1.8A, RDS(ON) = 250m @VGS = 10V. RDS(ON) = 330m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-89 package.GDSDGSOT-89SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1750

 

 
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