CEA6200 Specs and Replacement
Type Designator: CEA6200
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT89
CEA6200 substitution
- MOSFET ⓘ Cross-Reference Search
CEA6200 datasheet
cea6200.pdf
CEA6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 1.8A, RDS(ON) = 250m @VGS = 10V. RDS(ON) = 330m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units ... See More ⇒
Detailed specifications: WTL2622, WTM2310A, WTN9435, WTN9575, WTN9973, WTU1333, WTX1012, WTX7002, IRFP064N, CEA6426, CEB01N65, CEB01N6G, CEB02N65A, CEB02N65G, CEB02N6A, CEB02N6G, CEB02N7G
Keywords - CEA6200 MOSFET specs
CEA6200 cross reference
CEA6200 equivalent finder
CEA6200 pdf lookup
CEA6200 substitution
CEA6200 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
