All MOSFET. CEA6200 Datasheet


CEA6200 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEA6200

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2.4 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: SOT89

CEA6200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CEA6200 Datasheet (PDF)

1.1. cea6200.pdf Size:749K _cet


CEA6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 1.8A, RDS(ON) = 250m? @VGS = 10V. RDS(ON) = 330m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-

Datasheet: WTL2622 , WTM2310A , WTN9435 , WTN9575 , WTN9973 , WTU1333 , WTX1012 , WTX7002 , 2SK1058 , CEA6426 , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G .


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