CEA6200 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEA6200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1.8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2.4 nS
Drain-Source Capacitance (Cd): 45 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: SOT89
CEA6200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEA6200 Datasheet (PDF)
1.1. cea6200.pdf 
Size:749K _cet
CEA6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 1.8A, RDS(ON) = 250m? @VGS = 10V. RDS(ON) = 330m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-
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