CEA6426 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEA6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 4.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 4 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm
Package: SOT89
CEA6426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEA6426 Datasheet (PDF)
1.1. cea6426.pdf 
Size:426K _cet
CEA6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.6A, RDS(ON) = 90m? @VGS = 10V. RDS(ON) = 110m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltag
Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .
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