CEA6426 Datasheet and Replacement
Type Designator: CEA6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT89
CEA6426 substitution
CEA6426 Datasheet (PDF)
cea6426.pdf

CEA6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4.6A, RDS(ON) = 90m @VGS = 10V. RDS(ON) = 110m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-89 package.GDSDGSOT-89SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source
cea6426.pdf

CEA6426www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
Datasheet: WTM2310A , WTN9435 , WTN9575 , WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , IRFP064N , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 .
History: FDD6N25 | SRT06N095LDG
Keywords - CEA6426 MOSFET datasheet
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History: FDD6N25 | SRT06N095LDG



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