All MOSFET. CEB01N6G Datasheet

 

CEB01N6G Datasheet and Replacement


   Type Designator: CEB01N6G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.2 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
   Package: TO263
 

 CEB01N6G substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEB01N6G Datasheet (PDF)

 ..1. Size:368K  cet
 cep01n6g ceb01n6g cef01n6g.pdf pdf_icon

CEB01N6G

CEP01N6G/CEB01N6G CEF01N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP01N6G 600V 9.3 1A 10VCEB01N6G 600V 9.3 1A 10VCEF01N6G 600V 9.3 1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(DD-PA

 7.1. Size:424K  cet
 cep01n65 ceb01n65 cef01n65.pdf pdf_icon

CEB01N6G

CEP01N65/CEB01N65 CEF01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP01N65 650V 10.5 1.3A 10VCEB01N65 650V 10.5 1.3A 10VCEF01N65 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SE

Datasheet: WTN9575 , WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , IRFZ44N , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 .

History: CEU12P10

Keywords - CEB01N6G MOSFET datasheet

 CEB01N6G cross reference
 CEB01N6G equivalent finder
 CEB01N6G lookup
 CEB01N6G substitution
 CEB01N6G replacement

 

 
Back to Top

 


 
.