CEB01N6G Datasheet. Specs and Replacement
Type Designator: CEB01N6G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
Package: TO263
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CEB01N6G substitution
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CEB01N6G datasheet
cep01n6g ceb01n6g cef01n6g.pdf
CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6G 600V 9.3 1A 10V CEB01N6G 600V 9.3 1A 10V CEF01N6G 600V 9.3 1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PA... See More ⇒
cep01n65 ceb01n65 cef01n65.pdf
CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5 1.3A 10V CEB01N65 650V 10.5 1.3A 10V CEF01N65 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SE... See More ⇒
Detailed specifications: WTN9575, WTN9973, WTU1333, WTX1012, WTX7002, CEA6200, CEA6426, CEB01N65, IRFZ44N, CEB02N65A, CEB02N65G, CEB02N6A, CEB02N6G, CEB02N7G, CEB02N9, CEB03N8, CEB04N6
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