All MOSFET. CEB01N6G Datasheet

 

CEB01N6G MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB01N6G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 9.3 Ohm

Package: TO263

CEB01N6G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEB01N6G Datasheet (PDF)

1.1. cep01n6g ceb01n6g cef01n6g.pdf Size:368K _cet

CEB01N6G
CEB01N6G

CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6G 600V 9.3? 1A 10V CEB01N6G 600V 9.3? 1A 10V CEF01N6G 600V 9.3? 1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-22

3.1. cep01n65 ceb01n65 cef01n65.pdf Size:424K _cet

CEB01N6G
CEB01N6G

CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5? 1.3A 10V CEB01N65 650V 10.5? 1.3A 10V CEF01N65 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S

 

Datasheet: WTN9575 , WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , IRF3205 , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 .

 
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