CEB01N6G Datasheet and Replacement
Type Designator: CEB01N6G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
Package: TO263
CEB01N6G substitution
CEB01N6G Datasheet (PDF)
cep01n6g ceb01n6g cef01n6g.pdf

CEP01N6G/CEB01N6G CEF01N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP01N6G 600V 9.3 1A 10VCEB01N6G 600V 9.3 1A 10VCEF01N6G 600V 9.3 1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(DD-PA
cep01n65 ceb01n65 cef01n65.pdf

CEP01N65/CEB01N65 CEF01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP01N65 650V 10.5 1.3A 10VCEB01N65 650V 10.5 1.3A 10VCEF01N65 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SE
Datasheet: WTN9575 , WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , IRFZ44N , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 .
History: IRFZ46N
Keywords - CEB01N6G MOSFET datasheet
CEB01N6G cross reference
CEB01N6G equivalent finder
CEB01N6G lookup
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CEB01N6G replacement
History: IRFZ46N



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