CEB01N6G MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB01N6G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 41 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 9.3 Ohm
Package: TO263
CEB01N6G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB01N6G Datasheet (PDF)
1.1. cep01n6g ceb01n6g cef01n6g.pdf 
Size:368K _cet
CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6G 600V 9.3? 1A 10V CEB01N6G 600V 9.3? 1A 10V CEF01N6G 600V 9.3? 1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-22
3.1. cep01n65 ceb01n65 cef01n65.pdf Size:424K _cet
CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5? 1.3A 10V CEB01N65 650V 10.5? 1.3A 10V CEF01N65 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
