All MOSFET. CEB06N7 Datasheet

 

CEB06N7 Datasheet and Replacement


   Type Designator: CEB06N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263
 

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CEB06N7 Datasheet (PDF)

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CEB06N7

CEP06N7/CEB06N7CEF06N7N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP06N7 700V 2 6A 10VCEB06N7 700V 2 6A 10VCEF06N7 700V 2 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GCEB SERIESCEP SERIES CEF SERIESSTO-263(D

Datasheet: CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , IRFP260N , CEB07N65 , CEB07N65A , CEB07N7 , CEF02N65A , CEF02N65G , CEF02N6A , CEF02N6G , CEF02N7G .

History: IPU80R600P7 | IRF1407

Keywords - CEB06N7 MOSFET datasheet

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