All MOSFET. CEB06N7 Datasheet

 

CEB06N7 Datasheet and Replacement


   Type Designator: CEB06N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263
      - MOSFET Cross-Reference Search

 

CEB06N7 Datasheet (PDF)

 ..1. Size:375K  cet
 cep06n7 ceb06n7 cef06n7.pdf pdf_icon

CEB06N7

CEP06N7/CEB06N7CEF06N7N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP06N7 700V 2 6A 10VCEB06N7 700V 2 6A 10VCEF06N7 700V 2 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GCEB SERIESCEP SERIES CEF SERIESSTO-263(D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - CEB06N7 MOSFET datasheet

 CEB06N7 cross reference
 CEB06N7 equivalent finder
 CEB06N7 lookup
 CEB06N7 substitution
 CEB06N7 replacement

 

 
Back to Top

 


 
.