All MOSFET. CEB06N7 Datasheet

 

CEB06N7 Datasheet and Replacement


   Type Designator: CEB06N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO263
 

 CEB06N7 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEB06N7 Datasheet (PDF)

 ..1. Size:375K  cet
 cep06n7 ceb06n7 cef06n7.pdf pdf_icon

CEB06N7

CEP06N7/CEB06N7CEF06N7N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP06N7 700V 2 6A 10VCEB06N7 700V 2 6A 10VCEF06N7 700V 2 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GCEB SERIESCEP SERIES CEF SERIESSTO-263(D

Datasheet: CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , IRFP260N , CEB07N65 , CEB07N65A , CEB07N7 , CEF02N65A , CEF02N65G , CEF02N6A , CEF02N6G , CEF02N7G .

History: TK5A53D | FQAF9N50 | NCE0250D | ME4856 | CEB05N65 | IPD65R190C7

Keywords - CEB06N7 MOSFET datasheet

 CEB06N7 cross reference
 CEB06N7 equivalent finder
 CEB06N7 lookup
 CEB06N7 substitution
 CEB06N7 replacement

 

 
Back to Top

 


 
.