CEB06N7 Datasheet and Replacement
Type Designator: CEB06N7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 29 nC
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO263
CEB06N7 substitution
CEB06N7 Datasheet (PDF)
cep06n7 ceb06n7 cef06n7.pdf

CEP06N7/CEB06N7CEF06N7N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP06N7 700V 2 6A 10VCEB06N7 700V 2 6A 10VCEF06N7 700V 2 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GCEB SERIESCEP SERIES CEF SERIESSTO-263(D
Datasheet: CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , IRFB4110 , CEB07N65 , CEB07N65A , CEB07N7 , CEF02N65A , CEF02N65G , CEF02N6A , CEF02N6G , CEF02N7G .
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