All MOSFET. CEB06N7 Datasheet

 

CEB06N7 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB06N7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 29 nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO263

CEB06N7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB06N7 Datasheet (PDF)

0.1. cep06n7 ceb06n7 cef06n7.pdf Size:375K _cet

CEB06N7 CEB06N7

CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP06N7 700V 2Ω 6A 10V CEB06N7 700V 2Ω 6A 10V CEF06N7 700V 2Ω 6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CEF SERIES S TO-263(D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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