FDB8030L Specs and Replacement
Type Designator: FDB8030L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 187 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 185 nS
Cossⓘ - Output Capacitance: 2700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263AB
FDB8030L substitution
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FDB8030L datasheet
fdp8030l fdb8030l.pdf
November 1999 FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.0045 @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critic... See More ⇒
fdp8030l fdb8030l.pdf
FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.0045 @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electrica... See More ⇒
Detailed specifications: FDB6030L, FDB6035AL, FDB6035L, FDB603AL, FDB6670AL, FDB7030BL, FDB7030L, FDB7045L, 13N50, AS3401, FDC5612, FDC6301N, FDC6302P, FDC6303N, FDC6304P, FDC6305N, FDC6306P
Keywords - FDB8030L MOSFET specs
FDB8030L cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPB90N04S4-02 | FDB6670AL
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