All MOSFET. FDB8030L Datasheet

 

FDB8030L Datasheet and Replacement


   Type Designator: FDB8030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 185 nS
   Cossⓘ - Output Capacitance: 2700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO263AB
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FDB8030L Datasheet (PDF)

 ..1. Size:60K  fairchild semi
 fdp8030l fdb8030l.pdf pdf_icon

FDB8030L

November 1999FDP8030L/FDB8030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.0045 @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critic

 ..2. Size:282K  onsemi
 fdp8030l fdb8030l.pdf pdf_icon

FDB8030L

FDP8030L/FDB8030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.0045 @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electrica

Datasheet: FDB6030L , FDB6035AL , FDB6035L , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L , AON7506 , AS3401 , FDC5612 , FDC6301N , FDC6302P , FDC6303N , FDC6304P , FDC6305N , FDC6306P .

History: IRFI7536G | RFP2N10L | WMM11N80M3 | AM2314NE | STP7NA40 | FDMS9620S

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