CEB08N8 Specs and Replacement

Type Designator: CEB08N8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm

Package: TO263

CEB08N8 substitution

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CEB08N8 datasheet

 ..1. Size:434K  cet
 cep08n8 ceb08n8 cef08n8.pdf pdf_icon

CEB08N8

CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N8 800V 1.55 8A 10V CEB08N8 800V 1.55 8A 10V CEF08N8 800V 1.55 8A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 8.1. Size:375K  cet
 cep08n6a ceb08n6a cef08n6a.pdf pdf_icon

CEB08N8

CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25 7.5A 10V CEB08N6A 600V 1.25 7.5A 10V CEF08N6A 600V 1.25 7.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE... See More ⇒

Detailed specifications: CEP05N65, CEP06N7, CEP07N65, CEP07N65A, CEP07N7, CEB13N5A, CEF13N5A, CEP13N5A, CS150N03A8, CEF08N8, CEP08N8, CEB20A03, CEP20A03, CEB14G04, CEP14G04, CEB15A03, CEP15A03

Keywords - CEB08N8 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.