All MOSFET. CEB08N8 Datasheet

 

CEB08N8 Datasheet and Replacement


   Type Designator: CEB08N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO263
 

 CEB08N8 substitution

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CEB08N8 Datasheet (PDF)

 ..1. Size:434K  cet
 cep08n8 ceb08n8 cef08n8.pdf pdf_icon

CEB08N8

CEP08N8/CEB08N8CEF08N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP08N8 800V 1.55 8A 10VCEB08N8 800V 1.55 8A 10VCEF08N8 800V 1.55 8A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIES

 8.1. Size:375K  cet
 cep08n6a ceb08n6a cef08n6a.pdf pdf_icon

CEB08N8

CEP08N6A/CEB08N6ACEF08N6AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP08N6A 600V 1.25 7.5A 10VCEB08N6A 600V 1.25 7.5A 10VCEF08N6A 600V 1.25 7.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GCEB SERIESCEP SERIES CE

Datasheet: CEP05N65 , CEP06N7 , CEP07N65 , CEP07N65A , CEP07N7 , CEB13N5A , CEF13N5A , CEP13N5A , 5N65 , CEF08N8 , CEP08N8 , CEB20A03 , CEP20A03 , CEB14G04 , CEP14G04 , CEB15A03 , CEP15A03 .

History: SWP11N65D | AP10P10GJ-HF | APT20M10JFLL | VBZE50P04 | AP18N20GP-HF | 2N60L-TA3-T | SFG10R10PF

Keywords - CEB08N8 MOSFET datasheet

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