All MOSFET. CEF13N5 Datasheet

 

CEF13N5 Datasheet and Replacement


   Type Designator: CEF13N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO220F
 

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CEF13N5 Datasheet (PDF)

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 cep13n5 ceb13n5 cef13n5.pdf pdf_icon

CEF13N5

CEP13N5/CEB13N5 CEF13N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5 500V 0.48 13A 10VCEB13N5 500V 0.48 13A 10VCEF13N5 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

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 cep13n5a ceb13n5a cef13n5a.pdf pdf_icon

CEF13N5

CEP13N5A/CEB13N5ACEF13N5APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5A 500V 0.48 13A 10VCEB13N5A 500V 0.48 13A 10VCEF13N5A 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - CEF13N5 MOSFET datasheet

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