All MOSFET. CEB09N7G Datasheet

 

CEB09N7G Datasheet and Replacement


   Type Designator: CEB09N7G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO263
 

 CEB09N7G substitution

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CEB09N7G Datasheet (PDF)

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CEB09N7G

CEP09N7G/CEB09N7G CEF09N7GPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP09N7G 700V 1 9A 10VCEB09N7G 700V 1 9A 10VCEF09N7G 700V 1 9A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-26

Datasheet: CEP12N6 , CEP10N4 , CEB10N4 , CEI10N4 , CEF10N4 , CEB10N6 , CEF10N6 , CEP10N6 , 2SK3918 , CEF09N7G , CEP09N7G , CEB08N6A , CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 .

History: RU35122S

Keywords - CEB09N7G MOSFET datasheet

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