CEB09N7G Specs and Replacement

Type Designator: CEB09N7G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO263

CEB09N7G substitution

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CEB09N7G datasheet

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CEB09N7G

CEP09N7G/CEB09N7G CEF09N7G PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP09N7G 700V 1 9A 10V CEB09N7G 700V 1 9A 10V CEF09N7G 700V 1 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-26... See More ⇒

Detailed specifications: CEP12N6, CEP10N4, CEB10N4, CEI10N4, CEF10N4, CEB10N6, CEF10N6, CEP10N6, EMB04N03H, CEF09N7G, CEP09N7G, CEB08N6A, CEF08N6A, CEP08N6A, CEF1186, CEB1186, CEP1186

Keywords - CEB09N7G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.