CEB3120 Specs and Replacement

Type Designator: CEB3120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO263

CEB3120 substitution

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CEB3120 datasheet

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 cep3120 ceb3120.pdf pdf_icon

CEB3120

CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2... See More ⇒

Detailed specifications: CEB1186, CEP1186, CEB1195, CEF1195, CEP1195, CEB21A2, CEB3060, CEB30N15L, IRF540, CEB3205, CEB4060A, CEB4060AL, CEB45N10, CEB50N10, CEB540L, CEB540N, CEB6036

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