All MOSFET. CEB3120 Datasheet

 

CEB3120 Datasheet and Replacement


   Type Designator: CEB3120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO263
 

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CEB3120 Datasheet (PDF)

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CEB3120

CEP3120/CEB3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 40A,RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

Datasheet: CEB1186 , CEP1186 , CEB1195 , CEF1195 , CEP1195 , CEB21A2 , CEB3060 , CEB30N15L , IRF540 , CEB3205 , CEB4060A , CEB4060AL , CEB45N10 , CEB50N10 , CEB540L , CEB540N , CEB6036 .

History: GSM1304E

Keywords - CEB3120 MOSFET datasheet

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