All MOSFET. CEB3205 Datasheet

 

CEB3205 Datasheet and Replacement


   Type Designator: CEB3205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 108.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263
 

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CEB3205 Datasheet (PDF)

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CEB3205

CEP3205/CEB3205N-Channel Enhancement Mode Field Effect TransistorFEATURES55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

Datasheet: CEP1186 , CEB1195 , CEF1195 , CEP1195 , CEB21A2 , CEB3060 , CEB30N15L , CEB3120 , 50N06 , CEB4060A , CEB4060AL , CEB45N10 , CEB50N10 , CEB540L , CEB540N , CEB6036 , CEB6042 .

History: SFF80N20M | SVS60R190FJDD4 | TSM3400CX | GSM1304E | CEB3120 | UP9971G-D08-T | SFF7N60

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