CEB3205 Specs and Replacement

Type Designator: CEB3205

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 108.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 1115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO263

CEB3205 substitution

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CEB3205 datasheet

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 cep3205 ceb3205.pdf pdf_icon

CEB3205

CEP3205/CEB3205 N-Channel Enhancement Mode Field Effect Transistor FEATURES 55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no... See More ⇒

Detailed specifications: CEP1186, CEB1195, CEF1195, CEP1195, CEB21A2, CEB3060, CEB30N15L, CEB3120, 50N06, CEB4060A, CEB4060AL, CEB45N10, CEB50N10, CEB540L, CEB540N, CEB6036, CEB6042

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.