CEB4060A Specs and Replacement
Type Designator: CEB4060A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO263
CEB4060A substitution
- MOSFET ⓘ Cross-Reference Search
CEB4060A datasheet
cep4060a ceb4060a.pdf
CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒
cep4060al ceb4060al.pdf
CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc... See More ⇒
Detailed specifications: CEB1195, CEF1195, CEP1195, CEB21A2, CEB3060, CEB30N15L, CEB3120, CEB3205, IRFP460, CEB4060AL, CEB45N10, CEB50N10, CEB540L, CEB540N, CEB6036, CEB6042, CEB6056
Keywords - CEB4060A MOSFET specs
CEB4060A cross reference
CEB4060A equivalent finder
CEB4060A pdf lookup
CEB4060A substitution
CEB4060A replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
