All MOSFET. CEB4060A Datasheet

 

CEB4060A Datasheet and Replacement


   Type Designator: CEB4060A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO263
 

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CEB4060A Datasheet (PDF)

 ..1. Size:399K  cet
 cep4060a ceb4060a.pdf pdf_icon

CEB4060A

CEP4060A/CEB4060AN-Channel Enhancement Mode Field Effect Transistor FEATURES60V, 17A, RDS(ON) = 85m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 0.1. Size:401K  cet
 cep4060al ceb4060al.pdf pdf_icon

CEB4060A

CEP4060AL/CEB4060ALN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 17A,RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5.0V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc

Datasheet: CEB1195 , CEF1195 , CEP1195 , CEB21A2 , CEB3060 , CEB30N15L , CEB3120 , CEB3205 , IRF640 , CEB4060AL , CEB45N10 , CEB50N10 , CEB540L , CEB540N , CEB6036 , CEB6042 , CEB6056 .

History: IRFSL3107PBF | AON6206

Keywords - CEB4060A MOSFET datasheet

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