All MOSFET. CEB45N10 Datasheet

 

CEB45N10 Datasheet and Replacement


   Type Designator: CEB45N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO263
 

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CEB45N10 Datasheet (PDF)

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CEB45N10

CEP45N10/CEB45N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 44A, RDS(ON) = 39m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Datasheet: CEP1195 , CEB21A2 , CEB3060 , CEB30N15L , CEB3120 , CEB3205 , CEB4060A , CEB4060AL , IRFZ44 , CEB50N10 , CEB540L , CEB540N , CEB6036 , CEB6042 , CEB6056 , CEB6060L , CEB6060N .

History: SVG086R0NSTR | BUK7K32-100E | PSMN057-200B | IRFBE30S | SVG086R0NS | TPCP8007-H | PSMN059-150Y

Keywords - CEB45N10 MOSFET datasheet

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