CEB45N10 Specs and Replacement
Type Designator: CEB45N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO263
CEB45N10 substitution
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CEB45N10 datasheet
cep45n10 ceb45n10.pdf
CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒
Detailed specifications: CEP1195, CEB21A2, CEB3060, CEB30N15L, CEB3120, CEB3205, CEB4060A, CEB4060AL, IRF640, CEB50N10, CEB540L, CEB540N, CEB6036, CEB6042, CEB6056, CEB6060L, CEB6060N
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