CEB540N Specs and Replacement

Type Designator: CEB540N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 196 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TO263

CEB540N substitution

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CEB540N datasheet

 ..1. Size:407K  cet
cep540n ceb540n cef540n.pdf pdf_icon

CEB540N

CEP540N/CEB540N CEF540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. G CEB SERIES CEF SERIES CEP SERIES TO-263(DD-PAK) TO-220F S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C... See More ⇒

 8.1. Size:681K  cet
cep540l ceb540l cef540l.pdf pdf_icon

CEB540N

CEP540L/CEB540L CEF540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 53m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEF SERIES CEP SERIES TO-263(DD-PAK) TO-220F S TO-220 ABS... See More ⇒

Detailed specifications: CEB30N15L, CEB3120, CEB3205, CEB4060A, CEB4060AL, CEB45N10, CEB50N10, CEB540L, IRFB4110, CEB6036, CEB6042, CEB6056, CEB6060L, CEB6060N, CEB6086L, CEB60N06G, CEB60N10

Keywords - CEB540N MOSFET specs

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