All MOSFET. CEB540N Datasheet

 

CEB540N Datasheet and Replacement


   Type Designator: CEB540N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 196 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO263
 

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CEB540N Datasheet (PDF)

 ..1. Size:407K  cet
 cep540n ceb540n cef540n.pdf pdf_icon

CEB540N

CEP540N/CEB540N CEF540NN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 36A, RDS(ON) = 53m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. DTO-220 & TO-263 package.GCEB SERIES CEF SERIESCEP SERIESTO-263(DD-PAK) TO-220F STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C

 8.1. Size:681K  cet
 cep540l ceb540l cef540l.pdf pdf_icon

CEB540N

CEP540L/CEB540L CEF540LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 36A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 53m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIES CEF SERIESCEP SERIESTO-263(DD-PAK) TO-220F STO-220ABS

Datasheet: CEB30N15L , CEB3120 , CEB3205 , CEB4060A , CEB4060AL , CEB45N10 , CEB50N10 , CEB540L , IRF640N , CEB6036 , CEB6042 , CEB6056 , CEB6060L , CEB6060N , CEB6086L , CEB60N06G , CEB60N10 .

History: WFY6N02 | IRFU014A

Keywords - CEB540N MOSFET datasheet

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