CEB6186 Specs and Replacement

Type Designator: CEB6186

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO263

CEB6186 substitution

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CEB6186 datasheet

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 cep6186 ceb6186.pdf pdf_icon

CEB6186

CEP6186/CEB6186 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 33A, RDS(ON) = 25m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2... See More ⇒

Detailed specifications: CEB6036, CEB6042, CEB6056, CEB6060L, CEB6060N, CEB6086L, CEB60N06G, CEB60N10, 2N7000, CEP21A2, CEP3060, CEP30N15L, CEP3100, CEP3120, CEP3205, CEP4060A, CEP4060AL

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