All MOSFET. CEB6186 Datasheet

 

CEB6186 Datasheet and Replacement


   Type Designator: CEB6186
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO263
 

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CEB6186 Datasheet (PDF)

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CEB6186

CEP6186/CEB6186N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 33A, RDS(ON) = 25m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

Datasheet: CEB6036 , CEB6042 , CEB6056 , CEB6060L , CEB6060N , CEB6086L , CEB60N06G , CEB60N10 , IRF9540 , CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL .

History: CEP3060 | HSW6811 | MMN200H010X | NCE2025S | RQM2201DNS | FTK12N10S | MMN1000DB010B

Keywords - CEB6186 MOSFET datasheet

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