All MOSFET. CEP3100 Datasheet

 

CEP3100 Datasheet and Replacement


   Type Designator: CEP3100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

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CEP3100 Datasheet (PDF)

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CEP3100

CEP3100N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 47A,RDS(ON) = 12m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead-free plating ; RoHS compliant.TO-220 package.GCEP SERIESSTO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

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CEP3100

CEP3120/CEB3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 40A,RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

Datasheet: CEB6060N , CEB6086L , CEB60N06G , CEB60N10 , CEB6186 , CEP21A2 , CEP3060 , CEP30N15L , AON7408 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 , CEP540L , CEP540N .

History: 8N65KG-TA3-T | FTK7002EN | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

Keywords - CEP3100 MOSFET datasheet

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