CEP3100 Specs and Replacement

Type Designator: CEP3100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

CEP3100 substitution

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CEP3100 datasheet

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 cep3100.pdf pdf_icon

CEP3100

CEP3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 47A,RDS(ON) = 12m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 package. G CEP SERIES S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

 9.1. Size:429K  cet
 cep3120 ceb3120.pdf pdf_icon

CEP3100

CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2... See More ⇒

Detailed specifications: CEB6060N, CEB6086L, CEB60N06G, CEB60N10, CEB6186, CEP21A2, CEP3060, CEP30N15L, IRFP250N, CEP3120, CEP3205, CEP4060A, CEP4060AL, CEP45N10, CEP50N10, CEP540L, CEP540N

Keywords - CEP3100 MOSFET specs

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