All MOSFET. CEP3100 Datasheet

 

CEP3100 Datasheet and Replacement


   Type Designator: CEP3100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13.3 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
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CEP3100 Datasheet (PDF)

 ..1. Size:446K  cet
 cep3100.pdf pdf_icon

CEP3100

CEP3100N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 47A,RDS(ON) = 12m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead-free plating ; RoHS compliant.TO-220 package.GCEP SERIESSTO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 9.1. Size:429K  cet
 cep3120 ceb3120.pdf pdf_icon

CEP3100

CEP3120/CEB3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 40A,RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

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