All MOSFET. CEP3205 Datasheet

 

CEP3205 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEP3205

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 108.5 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 102.3 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 1115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: TO220

CEP3205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEP3205 Datasheet (PDF)

0.1. cep3205 ceb3205.pdf Size:421K _cet

CEP3205
CEP3205

CEP3205/CEB3205N-Channel Enhancement Mode Field Effect TransistorFEATURES55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

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