CEP3205 Datasheet and Replacement
Type Designator: CEP3205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 108.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 1115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
CEP3205 substitution
CEP3205 Datasheet (PDF)
cep3205 ceb3205.pdf
CEP3205/CEB3205N-Channel Enhancement Mode Field Effect TransistorFEATURES55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no
Datasheet: CEB60N06G , CEB60N10 , CEB6186 , CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , AO3400 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 , CEP540L , CEP540N , CEP6036 , CEP6042 .
History: SM1620CSCS
Keywords - CEP3205 MOSFET datasheet
 CEP3205 cross reference
 CEP3205 equivalent finder
 CEP3205 lookup
 CEP3205 substitution
 CEP3205 replacement
History: SM1620CSCS
 
 
 
 
LIST
Last Update
MOSFET: AGM1030MA | AGM1010A-F | AGM1010A-E | AGM1010A2 | AGM08T15C | AGM085N10F | AGM085N10C1 | AGM085N10C | AGM065N10D | AGM065N10C | AGM056N10H | AGM056N10C | AGM056N10A | AGM056N08C | AGM042N10D | AGM10N15D
 
 
Popular searches
irf640 datasheet | c945 transistor equivalent | irfz44 datasheet | tip3055 transistor | irf530 datasheet | 2sc2625 | 2sc1815 transistor | 2sd718
 
