CEP3205 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEP3205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 108.5 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 102.3 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 1115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO220
CEP3205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEP3205 Datasheet (PDF)
0.1. cep3205 ceb3205.pdf 
Size:421K _cet
CEP3205/CEB3205N-Channel Enhancement Mode Field Effect TransistorFEATURES55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no
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