All MOSFET. CEP3205 Datasheet

 

CEP3205 Datasheet and Replacement


   Type Designator: CEP3205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 108.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220
 

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CEP3205 Datasheet (PDF)

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CEP3205

CEP3205/CEB3205N-Channel Enhancement Mode Field Effect TransistorFEATURES55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

Datasheet: CEB60N06G , CEB60N10 , CEB6186 , CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , AO3400 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 , CEP540L , CEP540N , CEP6036 , CEP6042 .

History: DMN6066SSS | FQD5N20LTM

Keywords - CEP3205 MOSFET datasheet

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