CEP3205 Specs and Replacement
Type Designator: CEP3205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 108.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 1115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
CEP3205 substitution
CEP3205 datasheet
cep3205 ceb3205.pdf
CEP3205/CEB3205 N-Channel Enhancement Mode Field Effect Transistor FEATURES 55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no... See More ⇒
Detailed specifications: CEB60N06G , CEB60N10 , CEB6186 , CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , IRF9540 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 , CEP540L , CEP540N , CEP6036 , CEP6042 .
Keywords - CEP3205 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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