CEF730G Specs and Replacement

Type Designator: CEF730G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

CEF730G substitution

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CEF730G datasheet

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 cep730g ceb730g cef730g.pdf pdf_icon

CEF730G

CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1 5.5A 10V CEB730G 400V 1 5.5A 10V CEF730G 400V 1 5.5A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(... See More ⇒

Detailed specifications: CEP6060L, CEP6060N, CEP6086, CEP6086L, CEP60N06G, CEP60N10, CEP6186, CEF630N, 5N65, CEF740A, CEF740G, CEF80N15, CEF830G, CEF840A, CEF840G, CEF840L, CEF85N75

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