All MOSFET. CEF730G Datasheet

 

CEF730G Datasheet and Replacement


   Type Designator: CEF730G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F
 

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CEF730G Datasheet (PDF)

 ..1. Size:414K  cet
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CEF730G

CEP730G/CEB730G CEF730GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP730G 400V 1 5.5A 10VCEB730G 400V 1 5.5A 10VCEF730G 400V 1 5.5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(

Datasheet: CEP6060L , CEP6060N , CEP6086 , CEP6086L , CEP60N06G , CEP60N10 , CEP6186 , CEF630N , 5N65 , CEF740A , CEF740G , CEF80N15 , CEF830G , CEF840A , CEF840G , CEF840L , CEF85N75 .

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