All MOSFET. CEF85N75 Datasheet

 

CEF85N75 Datasheet and Replacement


   Type Designator: CEF85N75
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220F
 

 CEF85N75 substitution

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CEF85N75 Datasheet (PDF)

 ..1. Size:434K  cet
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CEF85N75

CEP85N75/CEB85N75CEF85N75N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP85N75 75V 12m 86A 10VCEB85N75 75V 12m 86A 10VCEF85N75 75V 12m 86A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for through

Datasheet: CEF730G , CEF740A , CEF740G , CEF80N15 , CEF830G , CEF840A , CEF840G , CEF840L , 20N50 , CEB630N , CEB730G , CEB73A3G , CEB740A , CEB740G , CEB75A3 , CEB75N06 , CEB75N06G .

History: FQI2N30TU

Keywords - CEF85N75 MOSFET datasheet

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