CEF85N75 Specs and Replacement
Type Designator: CEF85N75
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 86 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 715 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220F
CEF85N75 substitution
- MOSFET ⓘ Cross-Reference Search
CEF85N75 datasheet
cep85n75 ceb85n75 cef85n75.pdf
CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP85N75 75V 12m 86A 10V CEB85N75 75V 12m 86A 10V CEF85N75 75V 12m 86A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through... See More ⇒
Detailed specifications: CEF730G, CEF740A, CEF740G, CEF80N15, CEF830G, CEF840A, CEF840G, CEF840L, STP80NF70, CEB630N, CEB730G, CEB73A3G, CEB740A, CEB740G, CEB75A3, CEB75N06, CEB75N06G
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