All MOSFET. CEB630N Datasheet

 

CEB630N Datasheet and Replacement


   Type Designator: CEB630N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO263
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CEB630N Datasheet (PDF)

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CEB630N

CEP630N/CEB630N CEF630NN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP630N 200V 0.36 9A 10VCEB630N 200V 0.36 9A 10VCEF630N 200V 0.36 9A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

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History: SML100L16 | CHM85A3PAGP | SQ9407EY-T1 | ALD1103DB | TK7P65W | ZXM66P03N8

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