CEB630N Specs and Replacement
Type Designator: CEB630N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO263
CEB630N substitution
- MOSFET ⓘ Cross-Reference Search
CEB630N datasheet
cep630n ceb630n cef630n.pdf
CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP630N 200V 0.36 9A 10V CEB630N 200V 0.36 9A 10V CEF630N 200V 0.36 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) ... See More ⇒
Detailed specifications: CEF740A, CEF740G, CEF80N15, CEF830G, CEF840A, CEF840G, CEF840L, CEF85N75, IRFP450, CEB730G, CEB73A3G, CEB740A, CEB740G, CEB75A3, CEB75N06, CEB75N06G, CEB75N10
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
