All MOSFET. CEB740G Datasheet

 

CEB740G Datasheet and Replacement


   Type Designator: CEB740G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO263
 

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CEB740G Datasheet (PDF)

 ..1. Size:413K  cet
 cep740g ceb740g cef740g.pdf pdf_icon

CEB740G

CEP740G/CEB740G CEF740GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP740G 400V 0.55 10A 10VCEB740G 400V 0.55 10A 10VCEF740G 400V 0.55 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIEST

 8.1. Size:434K  cet
 cep740a ceb740a cef740a.pdf pdf_icon

CEB740G

CEP740A/CEB740ACEF740AN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP740A 400V 0.55 10A 10VCEB740A 400V 0.55 10A 10VCEF740A 400V 0.55 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(D

Datasheet: CEF840A , CEF840G , CEF840L , CEF85N75 , CEB630N , CEB730G , CEB73A3G , CEB740A , 10N65 , CEB75A3 , CEB75N06 , CEB75N06G , CEB75N10 , CEB80N15 , CEB830G , CEB83A3 , CEB83A3G .

History: 2SK1772

Keywords - CEB740G MOSFET datasheet

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