CEB80N15 Datasheet and Replacement
Type Designator: CEB80N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 455 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO263
CEB80N15 substitution
CEB80N15 Datasheet (PDF)
cep80n15 ceb80n15 cef80n15.pdf

CEP80N15/CEB80N15CEF80N15N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP80N15 150V 19m 76A 10VCEB80N15 150V 19m 76A 10VCEF80N15 150V 19m 76A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead-free plating ; RoHS compliant.TO-220 & TO-263 & TO-220F full-pak
Datasheet: CEB730G , CEB73A3G , CEB740A , CEB740G , CEB75A3 , CEB75N06 , CEB75N06G , CEB75N10 , 10N65 , CEB830G , CEB83A3 , CEB83A3G , CEB840A , CEB840G , CEB840L , CEB84A4 , CEB85A3 .
History: CEB840G | IPD60R1K5CE
Keywords - CEB80N15 MOSFET datasheet
CEB80N15 cross reference
CEB80N15 equivalent finder
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History: CEB840G | IPD60R1K5CE



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