All MOSFET. CEB80N15 Datasheet

 

CEB80N15 Datasheet and Replacement


   Type Designator: CEB80N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO263
 

 CEB80N15 substitution

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CEB80N15 Datasheet (PDF)

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CEB80N15

CEP80N15/CEB80N15CEF80N15N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP80N15 150V 19m 76A 10VCEB80N15 150V 19m 76A 10VCEF80N15 150V 19m 76A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead-free plating ; RoHS compliant.TO-220 & TO-263 & TO-220F full-pak

Datasheet: CEB730G , CEB73A3G , CEB740A , CEB740G , CEB75A3 , CEB75N06 , CEB75N06G , CEB75N10 , 13N50 , CEB830G , CEB83A3 , CEB83A3G , CEB840A , CEB840G , CEB840L , CEB84A4 , CEB85A3 .

History: FIR20N10LG | RQJ0305EQDQA | ME8205B-G | KRLML6401 | P057AAT | AON6266 | SPD01N60C3

Keywords - CEB80N15 MOSFET datasheet

 CEB80N15 cross reference
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