CEB80N15 Specs and Replacement
Type Designator: CEB80N15
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 455 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO263
CEB80N15 substitution
- MOSFET ⓘ Cross-Reference Search
CEB80N15 datasheet
cep80n15 ceb80n15 cef80n15.pdf
CEP80N15/CEB80N15 CEF80N15 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP80N15 150V 19m 76A 10V CEB80N15 150V 19m 76A 10V CEF80N15 150V 19m 76A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 & TO-220F full-pak... See More ⇒
Detailed specifications: CEB730G, CEB73A3G, CEB740A, CEB740G, CEB75A3, CEB75N06, CEB75N06G, CEB75N10, 5N60, CEB830G, CEB83A3, CEB83A3G, CEB840A, CEB840G, CEB840L, CEB84A4, CEB85A3
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
