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CEP740G Specs and Replacement


   Type Designator: CEP740G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220
 

 CEP740G substitution

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CEP740G Specs

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 cep740g ceb740g cef740g.pdf pdf_icon

CEP740G

CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP740G 400V 0.55 10A 10V CEB740G 400V 0.55 10A 10V CEF740G 400V 0.55 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES T... See More ⇒

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 cep740a ceb740a cef740a.pdf pdf_icon

CEP740G

CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP740A 400V 0.55 10A 10V CEB740A 400V 0.55 10A 10V CEF740A 400V 0.55 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D... See More ⇒

Detailed specifications: CEB85A3 , CEB85N75 , CEB85N75V , CEB9060N , CEP630N , CEP730G , CEP73A3G , CEP740A , STP65NF06 , CEP75A3 , CEP75N06 , CEP75N06G , CEP75N10 , CEP80N15 , CEP830G , CEP83A3 , CEP83A3G .

Keywords - CEP740G MOSFET specs

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