CEP740G Datasheet. Specs and Replacement
Type Designator: CEP740G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO220
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CEP740G datasheet
cep740g ceb740g cef740g.pdf
CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP740G 400V 0.55 10A 10V CEB740G 400V 0.55 10A 10V CEF740G 400V 0.55 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES T... See More ⇒
cep740a ceb740a cef740a.pdf
CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP740A 400V 0.55 10A 10V CEB740A 400V 0.55 10A 10V CEF740A 400V 0.55 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D... See More ⇒
Detailed specifications: CEB85A3, CEB85N75, CEB85N75V, CEB9060N, CEP630N, CEP730G, CEP73A3G, CEP740A, 2N60, CEP75A3, CEP75N06, CEP75N06G, CEP75N10, CEP80N15, CEP830G, CEP83A3, CEP83A3G
Keywords - CEP740G MOSFET specs
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