All MOSFET. CEBF640 Datasheet

 

CEBF640 Datasheet and Replacement


   Type Designator: CEBF640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO263
 

 CEBF640 substitution

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CEBF640 Datasheet (PDF)

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 cepf640 cebf640 ceff640.pdf pdf_icon

CEBF640

CEPF640/CEBF640 CEFF640N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF640 200V 0.15 19A 10VCEBF640 200V 0.15 19A 10VCEFF640 200V 0.15 19A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO-220F full-pak for through hole.

 9.1. Size:407K  cet
 cepf634 cebf634 ceif634 ceff634.pdf pdf_icon

CEBF640

CEPF634/CEBF634CEIF634/CEFF634N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF634 250V 0.45 8.1A 10VCEBF634 250V 0.45 8.1A 10VCEIF634 250V 0.45 8.1A 10VCEFF634 250V 0.45 8.1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-

 9.2. Size:512K  cet
 cepf630 cebf630.pdf pdf_icon

CEBF640

Datasheet: CEP840L , CEP84A4 , CEP85A3 , CEP85N75 , CEP85N75V , CEP9060N , CEP93A3 , CEBF634 , IRF730 , CED01N65 , CED01N65A , CED01N6G , CED01N7 , CED02N65A , CED02N65G , CED02N6A , CED02N6G .

History: CEB08N6A | CED01N65A | CEFF634 | CED01N65 | CEM9953A | AO4706 | CEM9435A

Keywords - CEBF640 MOSFET datasheet

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