CED02N9 Specs and Replacement

Type Designator: CED02N9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.8 Ohm

Package: TO251

CED02N9 substitution

- MOSFET ⓘ Cross-Reference Search

 

CED02N9 datasheet

 ..1. Size:414K  cet
 ceu02n9 ced02n9.pdf pdf_icon

CED02N9

CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A, RDS(ON) = 6.8 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C u... See More ⇒

 8.1. Size:666K  cet
 ceu02n7g-1 ced02n7g-1.pdf pdf_icon

CED02N9

CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING... See More ⇒

 8.2. Size:397K  cet
 ceu02n7g ced02n7g.pdf pdf_icon

CED02N9

CED02N7G/CEU02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.75 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o... See More ⇒

 8.3. Size:417K  cet
 ceu02n65g ced02n65g.pdf pdf_icon

CED02N9

CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒

SHOW MORE

Detailed specifications: CED01N6G, CED01N7, CED02N65A, CED02N65G, CED02N6A, CED02N6G, CED02N7G, CED02N7G-1, IRF640, CED03N8, CED04N6, CED04N65, CED04N7G, CED05N65, CED06N7, CED07N65A, CED08N6A

Keywords - CED02N9 MOSFET specs

 CED02N9 cross reference

 CED02N9 equivalent finder

 CED02N9 pdf lookup

 CED02N9 substitution

 CED02N9 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility