All MOSFET. CED03N8 Datasheet

 

CED03N8 Datasheet and Replacement


   Type Designator: CED03N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO251
 

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CED03N8 Datasheet (PDF)

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CED03N8

CED03N8/CEU03N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES800V, 2.5A, RDS(ON) = 4.8 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C

Datasheet: CED01N7 , CED02N65A , CED02N65G , CED02N6A , CED02N6G , CED02N7G , CED02N7G-1 , CED02N9 , IRF1404 , CED04N6 , CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 .

History: BR20N40 | UPA1913 | PMGD130UN | SVS7N60DD2TR | L2N7002DMT1G | HGN046NE6A | P3606BEA

Keywords - CED03N8 MOSFET datasheet

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