CED03N8 Specs and Replacement
Type Designator: CED03N8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO251
CED03N8 substitution
- MOSFET ⓘ Cross-Reference Search
CED03N8 datasheet
ceu03n8 ced03n8.pdf
CED03N8/CEU03N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 2.5A, RDS(ON) = 4.8 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C... See More ⇒
Detailed specifications: CED01N7, CED02N65A, CED02N65G, CED02N6A, CED02N6G, CED02N7G, CED02N7G-1, CED02N9, IRF1404, CED04N6, CED04N65, CED04N7G, CED05N65, CED06N7, CED07N65A, CED08N6A, CED12N10
Keywords - CED03N8 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
