All MOSFET. CED03N8 Datasheet

 

CED03N8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED03N8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 34 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm

Package: TO251

CED03N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED03N8 Datasheet (PDF)

1.1. ceu03n8 ced03n8.pdf Size:415K _cet

CED03N8
CED03N8

CED03N8/CEU03N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 2.5A, RDS(ON) = 4.8? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unle

Datasheet: CED01N7 , CED02N65A , CED02N65G , CED02N6A , CED02N6G , CED02N7G , CED02N7G-1 , CED02N9 , IRFP460 , CED04N6 , CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 .

 


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