CED07N65A Specs and Replacement
Type Designator: CED07N65A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO251
CED07N65A substitution
CED07N65A Specs
ced07n65a ceu07n65a.pdf
CED07N65A/CEU07N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 6A, RDS(ON) = 1.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒
ceu07n65a ced07n65a.pdf
CED07N65A/CEU07N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 6A, RDS(ON) = 1.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = ... See More ⇒
Detailed specifications: CED02N7G-1 , CED02N9 , CED03N8 , CED04N6 , CED04N65 , CED04N7G , CED05N65 , CED06N7 , IRFB4227 , CED08N6A , CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 .
History: QM3003V
Keywords - CED07N65A MOSFET specs
CED07N65A cross reference
CED07N65A equivalent finder
CED07N65A lookup
CED07N65A substitution
CED07N65A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: QM3003V
LIST
Last Update
MOSFET: AP3N50K | AP3N50F | AP3912GD
Popular searches
2sc2705 | bc239 | 2sc3264 | mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent