CED07N65A Datasheet. Specs and Replacement
Type Designator: CED07N65A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO251
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CED07N65A substitution
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CED07N65A datasheet
ced07n65a ceu07n65a.pdf
CED07N65A/CEU07N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 6A, RDS(ON) = 1.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒
ceu07n65a ced07n65a.pdf
CED07N65A/CEU07N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 6A, RDS(ON) = 1.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = ... See More ⇒
Detailed specifications: CED02N7G-1, CED02N9, CED03N8, CED04N6, CED04N65, CED04N7G, CED05N65, CED06N7, IRFB4227, CED08N6A, CED12N10, CED12N10L, CED14G04, CEFF634, CEFF640, CEPF634, CEPF640
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