All MOSFET. CED07N65A Datasheet

 

CED07N65A Datasheet and Replacement


   Type Designator: CED07N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO251
 

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CED07N65A Datasheet (PDF)

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 ced07n65a ceu07n65a.pdf pdf_icon

CED07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 ..2. Size:401K  cet
 ceu07n65a ced07n65a.pdf pdf_icon

CED07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

Datasheet: CED02N7G-1 , CED02N9 , CED03N8 , CED04N6 , CED04N65 , CED04N7G , CED05N65 , CED06N7 , AON6414A , CED08N6A , CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 .

History: PMV42ENE | DMG8880LSS | SQM90142E | CS65N20-30 | C3M0065100K | IPB120N08S4-03 | IXFV110N10P

Keywords - CED07N65A MOSFET datasheet

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