CED14G04 Datasheet and Replacement
Type Designator: CED14G04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 125 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 570 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO251
CED14G04 substitution
CED14G04 Datasheet (PDF)
ceu14g04 ced14g04.pdf

CED14G04/CEU14G04N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES40V, 125A, RDS(ON) = 3.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)
Datasheet: CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L , AON6414A , CEFF634 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G , CEU01N7 .
Keywords - CED14G04 MOSFET datasheet
CED14G04 cross reference
CED14G04 equivalent finder
CED14G04 lookup
CED14G04 substitution
CED14G04 replacement



LIST
Last Update
MOSFET: APG60N10S | APG120N04NF | AP8G06S | AP6P04S | AP6G03S | AP65N06DF | AP65N06D | AP4957A | AP15H06S | AP10G04S | AP90N08NF | AP8P06S | AP4G02LI | AP4606B | AP3P06MI | AP2302AI
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent | tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent