CED14G04 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED14G04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 125 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 50 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 570 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
Package: TO251
CED14G04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED14G04 Datasheet (PDF)
1.1. ceu14g04 ced14g04.pdf 
Size:415K _cet
CED14G04/CEU14G04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 125A, RDS(ON) = 3.8m? @VGS = 10V. RDS(ON) = 6.8m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLU
Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
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