CED14G04 Datasheet. Specs and Replacement

Type Designator: CED14G04  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO251

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CED14G04 datasheet

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CED14G04

CED14G04/CEU14G04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 125A, RDS(ON) = 3.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ... See More ⇒

Detailed specifications: CED04N65, CED04N7G, CED05N65, CED06N7, CED07N65A, CED08N6A, CED12N10, CED12N10L, IRFB4115, CEFF634, CEFF640, CEPF634, CEPF640, CEU01N65, CEU01N65A, CEU01N6G, CEU01N7

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