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CED14G04 PDF Specs and Replacement


   Type Designator: CED14G04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 125 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO251
 

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CED14G04 PDF Specs

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CED14G04

CED14G04/CEU14G04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 125A, RDS(ON) = 3.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ... See More ⇒

Detailed specifications: CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L , IRFB4115 , CEFF634 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G , CEU01N7 .

History: FQB8P10

Keywords - CED14G04 MOSFET specs

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