All MOSFET. CEU03N8 Datasheet

 

CEU03N8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEU03N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO252

 CEU03N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEU03N8 Datasheet (PDF)

 ..1. Size:415K  cet
 ceu03n8 ced03n8.pdf

CEU03N8 CEU03N8

CED03N8/CEU03N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES800V, 2.5A, RDS(ON) = 4.8 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CTU20N700 | WMM07N65C2 | WMN08N70C4 | WMM08N70C4

 

 
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