CEU03N8 Specs and Replacement

Type Designator: CEU03N8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO252

CEU03N8 substitution

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CEU03N8 datasheet

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 ceu03n8 ced03n8.pdf pdf_icon

CEU03N8

CED03N8/CEU03N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 2.5A, RDS(ON) = 4.8 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C... See More ⇒

Detailed specifications: CEU01N7, CEU02N65A, CEU02N65G, CEU02N6A, CEU02N6G, CEU02N7G, CEU02N7G-1, CEU02N9, K3569, CEU04N6, CEU04N65, CEU04N7G, CEU05N65, CEU06N7, CEU07N65A, CEU08N6A, CEU12N10

Keywords - CEU03N8 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs