All MOSFET. CEU03N8 Datasheet

 

CEU03N8 Datasheet and Replacement


   Type Designator: CEU03N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO252
 

 CEU03N8 substitution

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CEU03N8 Datasheet (PDF)

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 ceu03n8 ced03n8.pdf pdf_icon

CEU03N8

CED03N8/CEU03N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES800V, 2.5A, RDS(ON) = 4.8 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C

Datasheet: CEU01N7 , CEU02N65A , CEU02N65G , CEU02N6A , CEU02N6G , CEU02N7G , CEU02N7G-1 , CEU02N9 , K3569 , CEU04N6 , CEU04N65 , CEU04N7G , CEU05N65 , CEU06N7 , CEU07N65A , CEU08N6A , CEU12N10 .

History: CEU06N7 | AO4612 | TSM1NB60CW | IPDD60R050G7 | IPD80N04S3-06 | IPF105N03LG | TSM2301ACX

Keywords - CEU03N8 MOSFET datasheet

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