All MOSFET. CEU05N65 Datasheet

 

CEU05N65 Datasheet and Replacement


   Type Designator: CEU05N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO252
 

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CEU05N65 Datasheet (PDF)

 ..1. Size:415K  cet
 ceu05n65 ced05n65.pdf pdf_icon

CEU05N65

CED05N65/CEU05N65N-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 4A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 9.1. Size:365K  cet
 ced05p03 ceu05p03.pdf pdf_icon

CEU05N65

CED05P03/CEU05P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -15A, RDS(ON) = 70m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE

Datasheet: CEU02N6G , CEU02N7G , CEU02N7G-1 , CEU02N9 , CEU03N8 , CEU04N6 , CEU04N65 , CEU04N7G , SPP20N60C3 , CEU06N7 , CEU07N65A , CEU08N6A , CEU12N10 , CEU12N10L , CEU14G04 , CED16N10 , CED16N10L .

History: AOC2423 | NCEAP016N60VD | HM75N75 | AO4932 | AP97T07AGP-HF | VBMB2102M | IPB80N06S2L-11

Keywords - CEU05N65 MOSFET datasheet

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