All MOSFET. CEU06N7 Datasheet

 

CEU06N7 Datasheet and Replacement


   Type Designator: CEU06N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO252
 

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CEU06N7 Datasheet (PDF)

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 ceu06n7 ced06n7.pdf pdf_icon

CEU06N7

CED06N7/CEU06N7N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES700V, 5A, RDS(ON) = 2 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25

Datasheet: CEU02N7G , CEU02N7G-1 , CEU02N9 , CEU03N8 , CEU04N6 , CEU04N65 , CEU04N7G , CEU05N65 , IRFB3607 , CEU07N65A , CEU08N6A , CEU12N10 , CEU12N10L , CEU14G04 , CED16N10 , CED16N10L , CED21A2 .

History: APT38N60BC6 | AM2394NE | RQA0008NXAQS | VBA3211 | DH100P40 | APT6029BLL | VBA1410

Keywords - CEU06N7 MOSFET datasheet

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