CEU06N7 Specs and Replacement
Type Designator: CEU06N7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
CEU06N7 substitution
- MOSFET ⓘ Cross-Reference Search
CEU06N7 datasheet
ceu06n7 ced06n7.pdf
CED06N7/CEU06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 5A, RDS(ON) = 2 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒
Detailed specifications: CEU02N7G, CEU02N7G-1, CEU02N9, CEU03N8, CEU04N6, CEU04N65, CEU04N7G, CEU05N65, K4145, CEU07N65A, CEU08N6A, CEU12N10, CEU12N10L, CEU14G04, CED16N10, CED16N10L, CED21A2
Keywords - CEU06N7 MOSFET specs
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