All MOSFET. CEU08N6A Datasheet

 

CEU08N6A Datasheet and Replacement


   Type Designator: CEU08N6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO252
 

 CEU08N6A substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEU08N6A Datasheet (PDF)

 ..1. Size:398K  cet
 ceu08n6a ced08n6a.pdf pdf_icon

CEU08N6A

CED08N6A/CEU08N6AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES600V, 6.2A, RDS(ON) = 1.25 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS

Datasheet: CEU02N9 , CEU03N8 , CEU04N6 , CEU04N65 , CEU04N7G , CEU05N65 , CEU06N7 , CEU07N65A , RFP50N06 , CEU12N10 , CEU12N10L , CEU14G04 , CED16N10 , CED16N10L , CED21A2 , CED25N15L , CED3060 .

History: SI4622DY | VBZL80N03

Keywords - CEU08N6A MOSFET datasheet

 CEU08N6A cross reference
 CEU08N6A equivalent finder
 CEU08N6A lookup
 CEU08N6A substitution
 CEU08N6A replacement

 

 
Back to Top

 


 
.