CEU14G04 Specs and Replacement
Type Designator: CEU14G04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 125 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO252
CEU14G04 substitution
- MOSFET ⓘ Cross-Reference Search
CEU14G04 datasheet
ceu14g04 ced14g04.pdf
CED14G04/CEU14G04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 125A, RDS(ON) = 3.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ... See More ⇒
Detailed specifications: CEU04N65, CEU04N7G, CEU05N65, CEU06N7, CEU07N65A, CEU08N6A, CEU12N10, CEU12N10L, IRF1010E, CED16N10, CED16N10L, CED21A2, CED25N15L, CED3060, CED3100, CED3120, CED3172
Keywords - CEU14G04 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
