All MOSFET. CEU14G04 Datasheet

 

CEU14G04 Datasheet and Replacement


   Type Designator: CEU14G04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 125 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO252
 

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CEU14G04 Datasheet (PDF)

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 ceu14g04 ced14g04.pdf pdf_icon

CEU14G04

CED14G04/CEU14G04N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES40V, 125A, RDS(ON) = 3.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)

Datasheet: CEU04N65 , CEU04N7G , CEU05N65 , CEU06N7 , CEU07N65A , CEU08N6A , CEU12N10 , CEU12N10L , IRF530 , CED16N10 , CED16N10L , CED21A2 , CED25N15L , CED3060 , CED3100 , CED3120 , CED3172 .

History: TPP60R350C | 2SK1455 | IPB60R099CP | SSF2610E | AOWF12T60P | TPCA8027-H | P0620ED

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