All MOSFET. CED16N10 Datasheet

 

CED16N10 Datasheet and Replacement


   Type Designator: CED16N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2.9 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO251
 

 CED16N10 substitution

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CED16N10 Datasheet (PDF)

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 ceu16n10 ced16n10.pdf pdf_icon

CED16N10

CED16N10/CEU16N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 13.3A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 0.1. Size:684K  cet
 ceu16n10l ced16n10l.pdf pdf_icon

CED16N10

CED16N10L/CEU16N10LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 13.3A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-P

Datasheet: CEU04N7G , CEU05N65 , CEU06N7 , CEU07N65A , CEU08N6A , CEU12N10 , CEU12N10L , CEU14G04 , IRFB3607 , CED16N10L , CED21A2 , CED25N15L , CED3060 , CED3100 , CED3120 , CED3172 , CED3252 .

History: MTB55N06Q8 | OSG65R260FSF | STP20NM65N | APT20M11JLL | MTB55N03N3 | OSG65R220IZF | OSG60R580FF

Keywords - CED16N10 MOSFET datasheet

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