All MOSFET. FDD5202P Datasheet

 

FDD5202P Datasheet and Replacement


   Type Designator: FDD5202P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15.5 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-252
 

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FDD5202P Datasheet (PDF)

 ..1. Size:82K  fairchild semi
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FDD5202P

September 2000FDD5202PP-Channel, Logic Level, MOSFETFeaturesGeneral DescriptionThis P-Channel Logic level MOSFET is produced using -8 A, -60 V. RDS(on) = 0.3 @ VGS = -10 VFairchild Semiconductor's advanced process that has RDS(on) = 0.5 @ VGS = -4.5 V.been especially tailored to minimize the on stateresistance and yet maintain low gate charge for superior Low

Datasheet: FDC638P , FDC640P , FDC6506P , FDC653N , FDC654P , FDC655AN , FDC6561AN , FDC658P , 7N60 , FDD5680 , FDD5690 , FDD6030L , FDD6612A , FDD6670A , FDD6680 , FDD6680A , FDD6690A .

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