FDD5202P Specs and Replacement
Type Designator: FDD5202P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-252
FDD5202P substitution
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FDD5202P datasheet
fdd5202p.pdf
September 2000 FDD5202P P-Channel, Logic Level, MOSFET Features General Description This P-Channel Logic level MOSFET is produced using -8 A, -60 V. RDS(on) = 0.3 @ VGS = -10 V Fairchild Semiconductor's advanced process that has RDS(on) = 0.5 @ VGS = -4.5 V. been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior Low... See More ⇒
Detailed specifications: FDC638P , FDC640P , FDC6506P , FDC653N , FDC654P , FDC655AN , FDC6561AN , FDC658P , RFP50N06 , FDD5680 , FDD5690 , FDD6030L , FDD6612A , FDD6670A , FDD6680 , FDD6680A , FDD6690A .
History: BLF6G15L-250PBRN | IRF610S | IRF612 | BLF6G13L-250P
Keywords - FDD5202P MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: BLF6G15L-250PBRN | IRF610S | IRF612 | BLF6G13L-250P
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