All MOSFET. CED21A2 Datasheet

 

CED21A2 Datasheet and Replacement


   Type Designator: CED21A2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO251
 

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CED21A2 Datasheet (PDF)

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CED21A2

CED21A2/CEU21A2N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 20A, RDS(ON) = 40m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU

Datasheet: CEU06N7 , CEU07N65A , CEU08N6A , CEU12N10 , CEU12N10L , CEU14G04 , CED16N10 , CED16N10L , STP80NF70 , CED25N15L , CED3060 , CED3100 , CED3120 , CED3172 , CED3252 , CED4060A , CED4060AL .

History: GSM3410 | DAC040N120P2 | FQI9N08LTU | CEU14G04 | P1406BV | CSD18503Q5A | DH100P30C

Keywords - CED21A2 MOSFET datasheet

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