CED21A2 Specs and Replacement
Type Designator: CED21A2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 216 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO251
CED21A2 substitution
- MOSFET ⓘ Cross-Reference Search
CED21A2 datasheet
ceu21a2 ced21a2.pdf
CED21A2/CEU21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 20A, RDS(ON) = 40m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: CEU06N7, CEU07N65A, CEU08N6A, CEU12N10, CEU12N10L, CEU14G04, CED16N10, CED16N10L, IRF530, CED25N15L, CED3060, CED3100, CED3120, CED3172, CED3252, CED4060A, CED4060AL
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