CED3252 Specs and Replacement
Type Designator: CED3252
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO251
CED3252 substitution
- MOSFET ⓘ Cross-Reference Search
CED3252 datasheet
ceu3252 ced3252.pdf
CED3252/CEU3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 25A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 39m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM... See More ⇒
Detailed specifications: CED16N10, CED16N10L, CED21A2, CED25N15L, CED3060, CED3100, CED3120, CED3172, TK10A60D, CED4060A, CED4060AL, CED40N10, CED4204, CED540L, CED540N, CED55N10, CED6056
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
