All MOSFET. CED3252 Datasheet

 

CED3252 Datasheet and Replacement


   Type Designator: CED3252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO251
 

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CED3252 Datasheet (PDF)

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CED3252

CED3252/CEU3252N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 25A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 39m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

Datasheet: CED16N10 , CED16N10L , CED21A2 , CED25N15L , CED3060 , CED3100 , CED3120 , CED3172 , IRFZ24N , CED4060A , CED4060AL , CED40N10 , CED4204 , CED540L , CED540N , CED55N10 , CED6056 .

History: CTLM8110-M832D | HSS2306A

Keywords - CED3252 MOSFET datasheet

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