All MOSFET. CED6186 Datasheet

 

CED6186 Datasheet and Replacement


   Type Designator: CED6186
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO251
 

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CED6186 Datasheet (PDF)

 ..1. Size:414K  cet
 ced6186 ceu6186.pdf pdf_icon

CED6186

CED6186/CEU6186N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 28A, RDS(ON) = 25m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

 ..2. Size:415K  cet
 ceu6186 ced6186.pdf pdf_icon

CED6186

CED6186/CEU6186N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 28A, RDS(ON) = 25m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

Datasheet: CED40N10 , CED4204 , CED540L , CED540N , CED55N10 , CED6056 , CED6060N , CED6086 , 4N60 , CED630N , CED6336 , CED6426 , CED655 , CED730G , CEU16N10 , CEU16N10L , CEU21A2 .

History: FQP3N80 | NCEP050N12 | CS5M4905 | APT10025JVFR | FRL130H | CS4N65A8HD | AP9971GM-HF

Keywords - CED6186 MOSFET datasheet

 CED6186 cross reference
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