All MOSFET. CED6186 Datasheet

 

CED6186 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CED6186
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO251

 CED6186 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED6186 Datasheet (PDF)

 ..1. Size:414K  cet
 ced6186 ceu6186.pdf

CED6186 CED6186

CED6186/CEU6186N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 28A, RDS(ON) = 25m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

 ..2. Size:415K  cet
 ceu6186 ced6186.pdf

CED6186 CED6186

CED6186/CEU6186N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 28A, RDS(ON) = 25m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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