CED630N Specs and Replacement
Type Designator: CED630N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO251
CED630N substitution
- MOSFET ⓘ Cross-Reference Search
CED630N datasheet
ceu630n ced630n.pdf
CED630N/CEU630N N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth... See More ⇒
ceu6336 ced6336.pdf
CED6336/CEU6336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 25A , RDS(ON) = 41m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS... See More ⇒
Detailed specifications: CED4204, CED540L, CED540N, CED55N10, CED6056, CED6060N, CED6086, CED6186, 18N50, CED6336, CED6426, CED655, CED730G, CEU16N10, CEU16N10L, CEU21A2, CEU25N15L
Keywords - CED630N MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
