All MOSFET. CED630N Datasheet

 

CED630N Datasheet and Replacement


   Type Designator: CED630N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO251
 

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CED630N Datasheet (PDF)

 ..1. Size:392K  cet
 ceu630n ced630n.pdf pdf_icon

CED630N

CED630N/CEU630NN-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 7.5A, RDS(ON) = 0.36 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

 9.1. Size:390K  cet
 ceu6336 ced6336.pdf pdf_icon

CED630N

CED6336/CEU6336N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 25A , RDS(ON) = 41m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABS

Datasheet: CED4204 , CED540L , CED540N , CED55N10 , CED6056 , CED6060N , CED6086 , CED6186 , 75N75 , CED6336 , CED6426 , CED655 , CED730G , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L .

History: CED6426 | 5N90 | SIHFI820G | GSM8452 | WMK12N80M3 | AOD4286 | SGSP461

Keywords - CED630N MOSFET datasheet

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