CED6336 Specs and Replacement
Type Designator: CED6336
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO251
CED6336 substitution
- MOSFET ⓘ Cross-Reference Search
CED6336 datasheet
ceu6336 ced6336.pdf
CED6336/CEU6336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 25A , RDS(ON) = 41m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS... See More ⇒
ceu630n ced630n.pdf
CED630N/CEU630N N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth... See More ⇒
Detailed specifications: CED540L, CED540N, CED55N10, CED6056, CED6060N, CED6086, CED6186, CED630N, 20N50, CED6426, CED655, CED730G, CEU16N10, CEU16N10L, CEU21A2, CEU25N15L, CEU3060
Keywords - CED6336 MOSFET specs
CED6336 cross reference
CED6336 equivalent finder
CED6336 pdf lookup
CED6336 substitution
CED6336 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
