CED6426 Datasheet and Replacement
Type Designator: CED6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.9 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO251
CED6426 substitution
CED6426 Datasheet (PDF)
ced6426 ceu6426.pdf
CED6426/CEU6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU
ceu6426 ced6426.pdf
CED6426/CEU6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU
Datasheet: CED540N , CED55N10 , CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 , CS150N03A8 , CED655 , CED730G , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L , CEU3060 , CEU3100 .
History: DMN4010LK3
Keywords - CED6426 MOSFET datasheet
CED6426 cross reference
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CED6426 substitution
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History: DMN4010LK3
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