CED6426 Specs and Replacement
Type Designator: CED6426
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.9 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO251
CED6426 substitution
- MOSFET ⓘ Cross-Reference Search
CED6426 datasheet
ced6426 ceu6426.pdf
CED6426/CEU6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU... See More ⇒
ceu6426 ced6426.pdf
CED6426/CEU6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: CED540N, CED55N10, CED6056, CED6060N, CED6086, CED6186, CED630N, CED6336, IRF520, CED655, CED730G, CEU16N10, CEU16N10L, CEU21A2, CEU25N15L, CEU3060, CEU3100
Keywords - CED6426 MOSFET specs
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