All MOSFET. CED6426 Datasheet

 

CED6426 Datasheet and Replacement


   Type Designator: CED6426
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.9 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
   Package: TO251
 

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CED6426 Datasheet (PDF)

 ..1. Size:345K  cet
 ced6426 ceu6426.pdf pdf_icon

CED6426

CED6426/CEU6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU

 ..2. Size:345K  cet
 ceu6426 ced6426.pdf pdf_icon

CED6426

CED6426/CEU6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A , RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU

Datasheet: CED540N , CED55N10 , CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 , IRF520 , CED655 , CED730G , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L , CEU3060 , CEU3100 .

History: 3SK108T | UT3N10G-AE3-R | NP84N055ELE | 3SK108

Keywords - CED6426 MOSFET datasheet

 CED6426 cross reference
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