All MOSFET. CED655 Datasheet

 

CED655 Datasheet and Replacement


   Type Designator: CED655
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO251
 

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CED655 Datasheet (PDF)

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CED655

CED655/CEU655N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES150V, 6.4A, RDS(ON) = 0.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C

Datasheet: CED55N10 , CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 , CED6426 , IRFB31N20D , CED730G , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L , CEU3060 , CEU3100 , CEU3120 .

History: CS540 | RSR015P03TL | SIHFB9N65A | SUM110N08-07P | APT50M80B2VRG | AFN3406A | AM2343P

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