CED655 Specs and Replacement
Type Designator: CED655
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO251
CED655 substitution
- MOSFET ⓘ Cross-Reference Search
CED655 datasheet
ceu655 ced655.pdf
CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 6.4A, RDS(ON) = 0.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C ... See More ⇒
Detailed specifications: CED55N10, CED6056, CED6060N, CED6086, CED6186, CED630N, CED6336, CED6426, IRF2807, CED730G, CEU16N10, CEU16N10L, CEU21A2, CEU25N15L, CEU3060, CEU3100, CEU3120
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
