CED730G Specs and Replacement
Type Designator: CED730G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO251
CED730G substitution
- MOSFET ⓘ Cross-Reference Search
CED730G datasheet
ceu730g ced730g.pdf
CED730G/CEU730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 400V, 5A, RDS(ON) = 1 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C un... See More ⇒
ceu73a3g ced73a3g.pdf
CED73A3G/CEU73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS... See More ⇒
Detailed specifications: CED6056, CED6060N, CED6086, CED6186, CED630N, CED6336, CED6426, CED655, STF13NM60N, CEU16N10, CEU16N10L, CEU21A2, CEU25N15L, CEU3060, CEU3100, CEU3120, CEU3172
Keywords - CED730G MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
