All MOSFET. CED730G Datasheet

 

CED730G Datasheet and Replacement


   Type Designator: CED730G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO251
 
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CED730G Datasheet (PDF)

 ..1. Size:408K  cet
 ceu730g ced730g.pdf pdf_icon

CED730G

CED730G/CEU730GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES400V, 5A, RDS(ON) = 1 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C un

 9.1. Size:393K  cet
 ceu73a3g ced73a3g.pdf pdf_icon

CED730G

CED73A3G/CEU73A3GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 57A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABS

Datasheet: CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 , CED6426 , CED655 , IRF2807 , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L , CEU3060 , CEU3100 , CEU3120 , CEU3172 .

History: DMG10N60SCT

Keywords - CED730G MOSFET datasheet

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