All MOSFET. CED730G Datasheet

 

CED730G MOSFET. Datasheet pdf. Equivalent

Type Designator: CED730G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO251

CED730G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED730G Datasheet (PDF)

1.1. ceu730g ced730g.pdf Size:408K _cet

CED730G
CED730G

CED730G/CEU730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 400V, 5A, RDS(ON) = 1? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

5.1. ceu73a3g ced73a3g.pdf Size:393K _cet

CED730G
CED730G

CED73A3G/CEU73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 9m? @VGS = 10V. RDS(ON) = 16m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M

Datasheet: CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 , CED6426 , CED655 , 2N3824 , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L , CEU3060 , CEU3100 , CEU3120 , CEU3172 .

 


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