CEU16N10L MOSFET Datasheet: N-Ch, 100V, 13.3A. Full specification with pinout and replacement list

CEU16N10L Specs and Replacement

   Type Designator: CEU16N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO252

CEU16N10L substitution

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CEU16N10L datasheet

..1. Size:684K cet
ceu16n10l ced16n10l.pdf pdf_icon

CED16N10L/CEU16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-P... See More ⇒

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ceu16n10 ced16n10.pdf pdf_icon

CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless... See More ⇒

Detailed specifications: CED6086 , CED6186 , CED630N , CED6336 , CED6426 , CED655 , CED730G , CEU16N10 , 2N60 , CEU21A2 , CEU25N15L , CEU3060 , CEU3100 , CEU3120 , CEU3172 , CEU3252 , CEU4060A .