All MOSFET. CEU25N15L Datasheet

 

CEU25N15L Datasheet and Replacement


   Type Designator: CEU25N15L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO252
 

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CEU25N15L Datasheet (PDF)

 ..1. Size:410K  cet
 ceu25n15l ced25n15l.pdf pdf_icon

CEU25N15L

CED25N15L/CEU25N15LN-Channel Enhancement Mode Field Effect TransistorFEATURES150V, 25A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI

 8.1. Size:272K  cet
 ced25n02 ceu25n02.pdf pdf_icon

CEU25N15L

CED25N02/CEU25N02N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 25A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 33m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PA

Datasheet: CED630N , CED6336 , CED6426 , CED655 , CED730G , CEU16N10 , CEU16N10L , CEU21A2 , MMIS60R580P , CEU3060 , CEU3100 , CEU3120 , CEU3172 , CEU3252 , CEU4060A , CEU4060AL , CEU40N10 .

History: PMCM4401VNE | CS640F

Keywords - CEU25N15L MOSFET datasheet

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