All MOSFET. CEU55N10 Datasheet

 

CEU55N10 Datasheet and Replacement


   Type Designator: CEU55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO252
 

 CEU55N10 substitution

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CEU55N10 Datasheet (PDF)

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CEU55N10

CED55N10/CEU55N10N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 55A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc

Datasheet: CEU3172 , CEU3252 , CEU4060A , CEU4060AL , CEU40N10 , CEU4204 , CEU540L , CEU540N , 8N60 , CEU6056 , CEU6060N , CEU6086 , CEU6186 , CEU630N , CEU6336 , CEU6426 , CEU655 .

History: SWP056R68E7T | HGP155N15S | WSD30140DN56 | TPCP8405 | 2SJ377 | 2SK3111-S

Keywords - CEU55N10 MOSFET datasheet

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