All MOSFET. CEU655 Datasheet

 

CEU655 Datasheet and Replacement


   Type Designator: CEU655
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO252
 

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CEU655 Datasheet (PDF)

 ..1. Size:413K  cet
 ceu655 ced655.pdf pdf_icon

CEU655

CED655/CEU655N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES150V, 6.4A, RDS(ON) = 0.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C

 ..2. Size:846K  cn vbsemi
 ceu655.pdf pdf_icon

CEU655

CEU655www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

Datasheet: CEU55N10 , CEU6056 , CEU6060N , CEU6086 , CEU6186 , CEU630N , CEU6336 , CEU6426 , AO4468 , CEU730G , CEU73A3G , CEU740A , CEU75A3 , CEU830G , CEU83A3 , CEU83A3G , CEU840A .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | IXTA4N150HV

Keywords - CEU655 MOSFET datasheet

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