CEU655 Specs and Replacement
Type Designator: CEU655
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO252
CEU655 substitution
- MOSFET ⓘ Cross-Reference Search
CEU655 datasheet
ceu655 ced655.pdf
CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 6.4A, RDS(ON) = 0.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C ... See More ⇒
ceu655.pdf
CEU655 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS ... See More ⇒
Detailed specifications: CEU55N10, CEU6056, CEU6060N, CEU6086, CEU6186, CEU630N, CEU6336, CEU6426, 60N06, CEU730G, CEU73A3G, CEU740A, CEU75A3, CEU830G, CEU83A3, CEU83A3G, CEU840A
Keywords - CEU655 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
