CEU730G Specs and Replacement
Type Designator: CEU730G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO252
CEU730G substitution
- MOSFET ⓘ Cross-Reference Search
CEU730G datasheet
ceu730g ced730g.pdf
CED730G/CEU730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 400V, 5A, RDS(ON) = 1 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C un... See More ⇒
ceu73a3g ced73a3g.pdf
CED73A3G/CEU73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS... See More ⇒
Detailed specifications: CEU6056, CEU6060N, CEU6086, CEU6186, CEU630N, CEU6336, CEU6426, CEU655, IRFP064N, CEU73A3G, CEU740A, CEU75A3, CEU830G, CEU83A3, CEU83A3G, CEU840A, CEU84A4
Keywords - CEU730G MOSFET specs
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