CEUF640 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEUF640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 355 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO252
CEUF640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEUF640 PDF doc:
1.1. ceuf640_cedf640.pdf 
Size:368K _cet
CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 ? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwis
5.1. ceuf634_cedf634.pdf Size:390K _cet
CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) S TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise
Datasheet: CEU830G , CEU83A3 , CEU83A3G , CEU840A , CEU84A4 , CEU85A3 , CEU93A3 , CEUF634 , 2N7000 , CED73A3G , CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , CED840A , CED84A4 .
