CEUF640 Specs and Replacement
Type Designator: CEUF640
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 355 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO252
CEUF640 substitution
- MOSFET ⓘ Cross-Reference Search
CEUF640 datasheet
ceuf640 cedf640.pdf
CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth... See More ⇒
ceuf634 cedf634.pdf
CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) S TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe... See More ⇒
Detailed specifications: CEU830G, CEU83A3, CEU83A3G, CEU840A, CEU84A4, CEU85A3, CEU93A3, CEUF634, IRFZ44, CED73A3G, CED740A, CED75A3, CED830G, CED83A3, CED83A3G, CED840A, CED84A4
Keywords - CEUF640 MOSFET specs
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