All MOSFET. CEDF634 Datasheet

 

CEDF634 Datasheet and Replacement


   Type Designator: CEDF634
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO251
 

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CEDF634 Datasheet (PDF)

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CEDF634

CEDF634/CEUF634N-Channel Enhancement Mode Field Effect TransistorFEATURES250V, 6.7A, RDS(ON) = 450m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESTO-252(D-PAK) STO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

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CEDF634

CEDF640/CEUF640N-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 15A, RDS(ON) = 0.15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

Datasheet: CED75A3 , CED830G , CED83A3 , CED83A3G , CED840A , CED84A4 , CED85A3 , CED93A3 , IRFB4110 , CEDF640 , CEE02N6A , CEE02N6G , CEG2288 , CEG8205A , CEG8208 , CEH2288 , CEH2310 .

History: HFI640 | IRF7805ZPBF-1 | SWB060R65E7T | QM4014D | AP0103GMT-HF | AFN07N65T220T | SP8M70

Keywords - CEDF634 MOSFET datasheet

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