CEDF634 Specs and Replacement

Type Designator: CEDF634

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO251

CEDF634 substitution

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CEDF634 datasheet

 ..1. Size:390K  cet
 ceuf634 cedf634.pdf pdf_icon

CEDF634

CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) S TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe... See More ⇒

 9.1. Size:368K  cet
 ceuf640 cedf640.pdf pdf_icon

CEDF634

CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth... See More ⇒

Detailed specifications: CED75A3, CED830G, CED83A3, CED83A3G, CED840A, CED84A4, CED85A3, CED93A3, AON6414A, CEDF640, CEE02N6A, CEE02N6G, CEG2288, CEG8205A, CEG8208, CEH2288, CEH2310

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.